24 - 28 October 2016 • Marina Bay Sands Sands Expo and Convention Centre, Singapore
New techniques for the hydrogen passivation of defects and contaminants in crystalline silicon have focused on the control of the charge state of the hydrogen atoms to greatly enhance the diffusivity and reactivity. It appears most forms of recombination can be passivated, particularly the boron-oxygen defects apparently responsible for light-induced degradation (LID) in p-type Cz wafers. The new passivation techniques have been applied to cells from PERC production lines belonging to eight separate manufacturers, with an average performance increase of 5% with minimal subsequent LID during light-soaking. Perhaps surprisingly, the recent study and apparent identification of the defect in multi wafers responsible for typically 10% LID, has led to the identification of the same defect in mono silicon, including Cz and FZ, and both p-type and n-type wafers. Passivation techniques for this defect also appear to have been developed.
Stuart Wenham is Director of the Photovoltaics Centre of Excellence at UNSW. His involvement in photovoltaics spans >30 years and with his team has achieved many cell and module performance world-records and the large-scale commercialization of several technologies leading to $billions of product in the field. As CTO of the world’s largest cell manufacturer in 2011, he guided Suntech-Power to being the only PV company ever listed in the MIT Review’s Top 50 Technology Companies world-wide.
Wenham has been honoured with numerous International Awards including the: 2009 IEEE William Cherry Award; 2010 UK Energy Institute’s International Technology Award; and 2014 Harvey Engineering Prize from the UK Institution of Electronics and Technology.