24 - 28 October 2016 • Marina Bay Sands Sands Expo and Convention Centre, Singapore
We have already reported the interface architecture of perovskite (PVK: MAPbI3)/titania and proved that passivating the interface and decreasing the trap density at the interface is very important for enhancing solar cell efficiency. In this report, the architecture of other interface, namely, interface at PVK and hole transport layer will be discussed. The device has FTO-glass / compact titania / porous titania / PVK / SPIRO (hole ransport layer) / Au structure. After the interface between PVK and SPIRO was passivated, the photovoltaic efficiency increased from 14.5% to 17.6%. Interestingly, PVK grain boundary was also passivated. The charge recombination time scale between the PVK and SPIRO became longer from 0.3μsec to 60 μsec, drastically, leading to the conclusion that the PVK/SPIRO interface has large trap densities (charge recombination centers). The relationship between the passivation structure and solar cell performances will be discussed in detail.
The author was graduated from Osaka University in 1978 and received Ph.D from Osaka University in 1983. He joined R&D Center in Toshiba from 1978 to 2000, during which the author was engaged in development of ULSI lithography, solar cells, direct methanol fuel cells, and polysilanes. He joined polysilane research in Robert West group of Wisconsin University (US) from 1988 to 1990. He is a professor of Kyushu Institute of Technology (National Institute) since 2001. In addition, since 2009 he is a Supervisor of PRESTO project (Japan Science and Technology Agency (JST), “Photoenergy conversion systems and materials for the next generation solar cells“ project). From 2012 to 2016, he was Dean of graduate school of life science and systems engineering, Kyushu Institute of Technology. Since 2016 he is Executive Director, vice-President of Kyushu Institute of Technology. His research interest is printable solar cells.