24 - 28 October 2016 • Marina Bay Sands Sands Expo and Convention Centre, Singapore
Silicon heterojunction (SHJ) solar cells are one of the potential candidates for the realization of low-cost high efficiency solar cells. Heterojunction solar cells were produced on n-type wafers with emitter located at the front side. The front emitter with a thick p-layer is choosen to have a high built in potential and conductivity. To reduce the front emitter thickness and improve the conductivity, the p-layer emitter can be replaced with n-layer emitter. The advantage of the n-layer front emitter is carrier transport improvement and increase in optical response at the front without any compromise in the open circuit voltage. Moreover the asymmetry in interface defect capture cross section is reduced with thin n-type front emitter and hence minority carrier lifetime increases. The reduction in wafer thickness reduces the recombination at the interface and hence the interface defect density is decreased.
Junsin Yi, is a Professor at School of Electronic Electrical Engineering, Sungkyunkwan University South Korea. Prof. Junsin Yi received his Phd from New York State University, U.S.A in 1994 under the guidance of Wayne Anderson. Since 1995 he is with Sungkyunkwan University (SKKU) and his research interests include the development of novel solar cell concepts and fabrication processes of silicon solar cells including crystalline, thin film, heterojunction intrinsic thin film (HIT) and Thin Film Transistor. Prof. Junsin Yi has been honoured with numerous awards including the : SKKU fellow (2009 onwards), PVSEC scientist award (2009) for his outstanding contributions to the development of science and technology of photovoltaics. He has authored and co-authored more than 400 refereed journal and conference papers and patents. He is scientific committee member for several conferences and workshops in the field of photovoltaics.