24 - 28 October 2016 • Marina Bay Sands Sands Expo and Convention Centre, Singapore
In this paper, we demonstrate industrially feasible large-area solar cells achieving record energy conversion efficiencies of >21% on p-type boron doped multicrystalline silicon wafers. Advanced light trapping and passivation technologies are used to achieve excellent light absorption and very low surface recombination velocity. The bulk lifetime of the multicrystalline silicon wafers used for the fabrication exceeds 600µs after optimized gettering and hydrogenation processes. The high bulk lifetime and excellent surface passivation enable the open circuit voltage of the cells to exceed 665mV. The metallization process is done by screen printing utilizing optimized front and back patterns and firing in conventional belt furnace. The detailed performance parameters, reflectance and EQE of the cells will be illustrated in the paper. In addition, free energy loss analysis and computer simulations of the cells will be performed using control parameters measured during the fabrication processes.
Hao Jin received the Ph.D. degree in the field of photovoltaics and semiconductor material from the Australian National University in 2007.Since 2012, he has been the chief scientist of Jinko Solar China. Dr. Jin is one of core members in SEMI standard Committee and also a member of International Solar Energy Society (ISES). In 2016, he starts his position as the convener of International Electrotechnical Commission (IEC) TC82 WG8. In January 2015, he led Jinko R&D team to create the new world record of 334.5W poly-crystal module with 60 cells certified by TÜV Rheinland. At the end of 2015, he achieved new mutlicrystalline silicon solar cell efficiency record of 20.13% at mass production level. He is in the author/coauthor of over 50 publications in journals and conference proceedings, over 70 patents, 9 national standards including standards in applications and over 40 talks at international conferences.