24 - 28 October 2016 • Marina Bay Sands Sands Expo and Convention Centre, Singapore
The CIGS cell efficiency is now approaching 23%, thanks to the recent advancement in the front surface passivation scheme for the CIGS absorber layer. In this paper, we describe a number of key R&D items for further efficiency enhancement and for commercial implementation by considering in detail the performance losses in the small-area unit cell all the way to the large-area commercial-size module. Key process parameters for the efficiency enhancement were determined and a roadmap to 19% module efficiency without a major change in the manufacturing process was developed. The manufacturing cost broken down to each unit process was analyzed to identify the steps critical for cost reduction and to determine the tradeoff between the efficiency enhancement and the corresponding additional cost. Taking into account the economy of scale and the enhancement in the module efficiency, the road to manufacturing cost below $0.30/Wp is presented.
Dr. Dong Seop Kim has devoted more than 27 years in PV including Cu(InGa)Se2, crystalline silicon and CdTe. He received Ph.D degree with CdS/CdTe solar cells from the KAIST in 1994. In 1998, he studied the thin film deposition as a postdoctoral fellow at University of Illinois. At Georgia Tech, he studied the defect passivation and innovative processes for high-efficiency Si solar cells. He achieved excellent performances in the fields of CIGS and c-Si solar cells at Samsung as a director of the R&D team during the last 7 years. He is a founder and CTO of CiGSone Technology Corp.